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STL90N10F7 датащи(PDF) 2 Page - STMicroelectronics

номер детали STL90N10F7
подробное описание детали  N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STL90N10F7 датащи(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
70
A
Drain current (continuous) at TC= 100 °C
50
A
ID(2)
Drain current (continuous) at Tpcb = 25 °C
16
A
Drain current (continuous) at Tpcb= 100 °C
11
A
IDM(1)(3)
Drain current (pulsed)
280
A
IDM(2)(3)
Drain current (pulsed)
64
A
PTOT(1)
Total power dissipation at TC = 25 °C
100
W
PTOT(2)
Total power dissipation at Tpcb = 25 °C
5
W
EAS(4)
Single pulse avalanche energy
300
mJ
Tstg
Storage temperature range
- 55 to 175
°C
TJ
Operating junction temperature range
°C
1. This value is rated according to Rthj-c.
2. This value is rated according to Rthj-pcb.
3. Pulse width is limited by safe operating area.
4. Starting TJ = 25 °C, ID = 10 A, VDD = 50 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.5
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb
31
1. When mounted on 1 inch², 2 Oz. Cu FR-4 board.
STL90N10F7
Electrical ratings
DS9621 - Rev 7
page 2/16



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