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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STD4NK100Z датащи(PDF) 4 Page - STMicroelectronics |
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STD4NK100Z датащи(HTML) 4 Page - STMicroelectronics |
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4 / 15 page  Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2.2 A ISDM(1) Source-drain current (pulsed) - 8.8 A VSD(2) Forward on voltage ISD = 2.5 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 584 ns Qrr Reverse recovery charge - 2.3 μC IRRM Reverse recovery current - 8 A trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, VDD = 100 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 628 ns Qrr Reverse recovery charge - 2.5 μC IRRM Reverse recovery current - 8.1 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. STD4NK100Z Electrical characteristics DS8902 - Rev 3 page 4/15 |
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