IXGA150N33TC datasheet(1/5 Pages) IXYS

номер детали	IXGA150N33TC

подробное описание детали	Trench Gate High Speed

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250μA, V

GE = 0V

330

V

GE(th)

I

C

= 250μA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = 330 V

1

μA

V

GE= 0 V

T

J = 125°C

200 μA

I

GES

V

CE = 0 V, VGE = ±20 V

±100 nA

V

CE(sat)

V

GE = 15V, IC = 75A

1.48

1.8

V

T

J = 125°C

1.49

V

I

C = 150A

1.83

V

T

J = 125°C

1.97

V

Trench Gate High Speed

IGBT

For PDP Applications

DS99757A(09/08)

Features

•International standard packages

•Low V

CE(sat)

- for minimum on-state conduction

losses

•Fast switching

Applications

• PDP Screen Drivers

IXGA150N33TC

IXGQ150N33TC

IXGQ150N33TCD1

V

CES

=

330V

I

CP

=

400A

V

CE(sat)

≤≤≤≤≤ 1.8V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

C = 25°C to 150°C

330

V

GEM

Transient

± 30

V

I

C25

T

C

= 25°C, IGBT chip capability

150

A

I

CP

T

J

≤ 150°C, tp < 10 μs

400

A

I

DP

T

J

≤ 150°C, tp < 10 μs

40

A

I

C(RMS)

Lead current limit

75

A

P

C

T

C = 25°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting torque (TO-220)(TO-3P)

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-3P

5.5

g

150N33TC

150N33TCD1

G = Gate

C

= Collector

E = Emitter

TAB = Collector

TO-3P (IXGQ)

(TAB)

C

G

E

TO-263 (IXGA)

G

E

(TAB)

Аналогичный номер детали - IXGA150N33TC

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXGA15N100C	103Kb / 2P	IGBT Lightspeed Series
	IXGA15N120B	59Kb / 2P	HiPerFAST IGBT
	IXGA15N120C	68Kb / 2P	HiPerFAST IGBT

More results

Аналогичное описание - IXGA150N33TC

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGB20H60DF	1Mb / 22P	600 V, 20 A high speed trench gate field-stop IGBT 03-Jun-2013
List of Unclassifed Man...	STGP20V60DF	2Mb / 23P	600 V, 20 A very high speed trench gate field-stop IGBT
STMicroelectronics	STGB20V60F	1Mb / 18P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1
	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT 11-Jul-2013
	STGW20H60DF	1Mb / 17P	600 V, 20 A high speed trench gate field-stop IGBT 06-Jun-2013
IXYS Corporation	IXGA90N33TC	150Kb / 5P	Trench Gate, High Speed, IGBTs
IXYS Corporation	IXGP24N60C4D1	92Kb / 2P	High-Speed PT Trench IGBT
Vishay Siliconix	VS-GT90DA60U	214Kb / 10P	Insulated Gate Bipolar Transistor (High Speed Trench IGBT), 93 A 20-Jul-2021
Vishay Siliconix	VS-GT90DA60U	215Kb / 10P	Insulated Gate Bipolar Transistor (High Speed Trench IGBT), 93 A 20-Jul-2021

More results

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Аналогичный номер детали - IXGA150N33TC

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