MP86936

– INTELLI-PHASETM WITH INTEGRATED DRIVER AND MOSFETS

MP86936 Rev. 1.1

www.MonolithicPower.com

3

8/4/2023

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PIN FUNCTIONS

Pin #

Name

Description

1, 15, 16

VIN

Supply voltage. Place the input capacitor (CIN) close to the device to support the

switching current and reduce voltage spikes at the input.

2, 3, 4, 5

SW

Phase node.

6

VDRV

Driver voltage. Connect this pin to a 3.3V supply and decouple with a 1µF to 4.7µF

ceramic capacitor.

7, 8, 9, 10,

11, 12, 13, 14

PGND

Power ground.

17

PWM

Pulse width modulation (PWM) input. Leave PWM floating or drive it to a mid-

state to put SW in a high-impedance state.

18

SYNC

Diode emulation mode and standby mode selection. Leave SYNC floating or

drive it to a mid-state to enter standby mode. Pull this pin high for continuous

conduction mode (CCM). Pull this pin low to enable diode emulation mode.

19

CS

Current-sense output. Use an external resistor to adjust the voltage to be

proportional to the inductor current.

20

VTEMP/FLT

Single-pin temperature sense and fault reporting. If a fault occurs, this pin is

pulled up to 3.3V.

21

AGND

Analog ground.

22

VDD

Internal circuitry voltage. Connect this pin to VDRV through a

2.2Ω resistor and

decouple with a 1µF capacitor to AGND. Connect AGND and PGND at the VDD

capacitor.

23

BST

Bootstrap. BST requires a 0.1µF to 0.22µF capacitor to drive the power switch gate

above the supply voltage. Connect the capacitor between SW and BST pins to form

a floating supply across the power switch driver.

ABSOLUTE MAXIMUM RATINGS (1)

Supply voltage (VIN) ..................................... 18V

VIN to VSW (DC)..............................-0.3V to +25V

VIN to VSW (10ns) ..............................-5V to +32V

VSW to PGND (DC)................ -0.3V to VIN + 0.3V

VSW to PGND (25ns) ........................ -5V to +25V

VBST ...................................................... VSW + 4V

VDD, VDRV .........................................-0.3V to +4V

All other pins ........................ -0.3V to VDD + 0.3V

Instantaneous current ................................. 95A

Junction temperature ................................150°C

Lead temperature .....................................260°C

Storage temperature ................ -65°C to +150°C

ESD Ratings

Human body model (HBM) .................. Class 1C

Charged device model (CDM) .......... Class C2B

Recommended Operating Conditions (2)

Supply voltage (VIN) .........................3.0V to 16V

Driver voltage (VDRV) .......................3.0V to 3.6V

Logic voltage (VDD)..........................3.0V to 3.6V

Operating junction temp (TJ) .... -40°C to +125°C

Thermal Resistance (3)

θJB

θJC_TOP

TQFN-23 (3mmx6mm) ...........1.8 ...... 15

…

C/W

Notes:

1) Exceeding these ratings may damage the device.

2) The device is not guaranteed to function outside of its operating

conditions.

3)

θ

JB: Thermal resistance from the junction to board around the

PGND soldering point.

θ

JC_TOP: Thermal resistance from the junction to the top of the

package.