MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR

TMD1414-2C

TECHNICAL DATA

FEATURES

n HIGH POWER

n BROAD BAND INTERNALLY MATCHED

P1dB=34.5dBm at 13.75GHz to 14.5GHz

n HIGH GAIN

n HERMETICALLY SEALED PACKAGE

G1dB=26.0dB at 13.75GHz to 14.5GHz

ABSOLUTE MAXIMUM RATINGS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

UNIT

RATING

Drain Supply Voltage

V

10

Gate Supply Voltage

V

-10

Input Power

dBm

20

Flange Temperature

°C

-40

∼ +90

Storage Temperature

°C

-65

∼ +175

RF PERFORMANCE SPECIFICATIONS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP. MAX.

Operating Frequency

f

GHz

13.75



14.5

Output Power at 1dB Gain

Compression Point

dBm

32.0

34.5



1dB Gain Compression

Point

G1dB

dB

21.0

26.0



Gain Flatness

∆G

dB





±1.0

Drain Current

IDD

A



1.4

1.8

Power Added Efficiency

ηadd

VDD=7V

VGG=-5V

%



29



u

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Mar.2006