Nexperia

PSMP033-60YE

60 V, P-channel Trench MOSFET

VGS (V)

0

-4

-3

-2

-1

aaa-030716

-20

-15

-10

-5

ID

(A)

0

Tj = 175 °C

Tj = 25 °C

VDS = -10 V

Fig. 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60

180

120

0

60

aaa-030717

1.0

1.5

0.5

2.0

2.5

a

0

Fig. 10. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60

180

0

60

120

aaa-030718

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

VGS(th)

(V)

0

Max

Typ

Min

ID = -250 μA; VDS = VGS

Fig. 11. Gate-source threshold voltage as a function of

junction temperature

aaa-030719

VDS (V)

-10-1

-102

-10

-1

103

104

C

(pF)

102

Crss

Coss

Ciss

f = 1 MHz; VGS = 0 V

Fig. 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMP033-60YE

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Product data sheet

13 January 2021

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