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MBR130LSFT1 датащи(PDF) 2 Page - ON Semiconductor

номер детали MBR130LSFT1
подробное описание детали  Surface Mount Schottky Power Rectifier
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR130LSFT1 датащи(HTML) 2 Page - ON Semiconductor

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MBR130LSFT1
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current (At Rated VR, TL = 117°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 110°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40
A
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C
TJ = 100°C
V
(IF = 0.1 A)
(IF = 0.7 A)
(IF = 1.0 A)
0.29
0.36
0.38
0.18
0.27
0.30
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 30 V)
1.0
25
3. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2%.



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