AS5116A-HSOT datasheet(9/34 Pages) AMSCO

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AS5116

Electrical Characteristics

Datasheet

• PUBLIC

DS000686

• v4-00 • 2022-Feb-18

│ 9

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_OUT_3V

Output Current 3V3

Operation

External Components

Rpu

Pull up resistor in Figure 28

and Figure 29

100

Ω

Cout

Output capacitors C1, C2,

C3 and C4 in Figure 28 and

Figure 29

0.5

Figure 7:

Key Performance Parameters

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

INL_error (1)

Based on Sensor

Internal Imperfections

-40 °C to 150 °C

0.5

degree

INL_error + Magnet (1)

Non-Linearity @

Displacement of Magnet

and Temperature

-40 °C to 150 °C

Assuming N35H

Magnet (D=8 mm, H=3 mm)

500

μm displacement in x

and y.

Package to magnet gap

1700

μm

0.6

1.2

degree

SINCOS_ORT_error (2)

Orthogonality Error.

Defines deviation of

ideal phase shift of 90°

between SIN and COS

output signals

Based on maximum

INL_error.

-2

degree

SINCOS_GAIN_error (2)

Gain Mismatch between

SIN and COS channel

Based on maximum

INL_error

-3.5

3.5

NOISE5V

Maximum RMS Noise.

Depending on Gain

Configuration (see

Figure 10).

VDD = 5 V (5 V operation)

2.47

mVrms

NOISE3V3

Maximum RMS Noise.

Depending on Gain

Configuration (see

Figure 10).

VDD = 3.3 V (3V3 operation)

2.61

mVrms

Propagation Delay

µs

Magnetic Sensitivity

Differential Output Mode

mV/mT

Gain Variation at 25 °C

Variation of selected

absolute GAIN

(Part to Part Variation)

-16

GV_Temp_AS5116 (3)

Gain Variation Over

Temperature

-40°C to 150 °C

(Gain drift of one single

sensor)

-0.105

-0.05

%/°C

GV_Temp_AS5116A (4)

Gain Variation Over

Temperature

-40 °C to 150 °C

(Gain drift of one single

sensor)

-0.075

-0.03

%/°C

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