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MAC4DHM датащи(PDF) 4 Page - ON Semiconductor

номер детали MAC4DHM
подробное описание детали  Sensitive Gate Triacs Silicon Bidirectional Thyristors
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MAC4DHM датащи(HTML) 4 Page - ON Semiconductor

  MAC4DHM Datasheet HTML 1Page - ON Semiconductor MAC4DHM Datasheet HTML 2Page - ON Semiconductor MAC4DHM Datasheet HTML 3Page - ON Semiconductor MAC4DHM Datasheet HTML 4Page - ON Semiconductor MAC4DHM Datasheet HTML 5Page - ON Semiconductor MAC4DHM Datasheet HTML 6Page - ON Semiconductor MAC4DHM Datasheet HTML 7Page - ON Semiconductor  
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MAC4DHM
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4
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.5
4.0
0
IT(RMS), RMS ON−STATE CURRENT (AMPS)
110
105
100
IT(RMS), RMS ON−STATE CURRENT (AMPS)
3.0
4.0
0
4.0
2.0
1.0
0
4.0
0
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.0
0.1
1.0
0.1
0.01
3.5
−25
20
−40
TJ, JUNCTION TEMPERATURE (°C)
8.0
3.0
2.0
0
TJ, JUNCTION TEMPERATURE (°C)
−25
65
−40
0.8
0.6
0.2
20
5.0
95
90
0.5
1.0
1.5
2.0
3.0
3.5
1.0
2.0
3.0
5.0
6.0
1.0
0.5
3.0
10
100
1000
10 K
50
110
65
4.0
5.0
110
35
50
0.4
80
5.0
dc
180°
120°
90°
60°
a = 30°
dc
180°
120°
90°
60°
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
ZqJC(t) = RqJC(t)Sr(t)
Q3
Q2
Q1
Q3
Q2
Q1
α
α
a = CONDUCTION ANGLE
α
α
a = CONDUCTION ANGLE
a = 30°
1.0
1.0
2.5
3.5
0.5
1.5
2.5
2.0
1.5
−10
35
95
6.0
7.0
Q4
−10
95
80
Q4



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