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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXTH10N60 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH10N60 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTH10N60 FEATURES · Drain Current –ID=10A@ TC=25℃ · Drain Source Voltage- : VDSS=600V(Min) · Static Drain-Source On-Resistance : RDS(on) =0.7Ω(Max)@VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 180 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃ /W |
Аналогичный номер детали - IXTH10N60 |
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Аналогичное описание - IXTH10N60 |
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