M45PE16 datasheet(23/45 Pages) STMICROELECTRONICS

номер детали	M45PE16

подробное описание детали	16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

PDF	45 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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M45PE16

Instructions

23/45

6.6

Read Data Bytes at Higher Speed (FAST_READ)

The device is first selected by driving Chip Select (S) Low. The instruction code for the Read

Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-

A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).

Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each

bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).

The instruction sequence is shown in Figure 11.

The first byte addressed can be at any location. The address is automatically incremented

to the next higher address after each byte of data is shifted out. The whole memory can,

therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)

instruction. When the highest address is reached, the address counter rolls over to

000000h, allowing the read sequence to be continued indefinitely.

The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving

Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any

Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or

Write cycle is in progress, is rejected without having any effects on the cycle that is in

progress.

Figure 11.

Read Data Bytes at Higher Speed (FAST_READ) instruction sequence

and data-out sequence

Address bits A23 to A21 are Don’t Care.

AI04006

3456789 10

28 29 30 31

22 21

3210

High Impedance

Instruction

24 BIT ADDRESS

32 33 34

36 37 38 39 40 41 42 43 44 45 46

765432

DATA OUT 1

Dummy Byte

MSB

6543210

DATA OUT 2

MSB

765432

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