STSJ100NHS3LL datasheet(4/12 Pages) STMICROELECTRONICS

номер детали	STSJ100NHS3LL

подробное описание детали	N-channel 30V - 0.0032ohm - 20A - PowerSO-8 STripFET III Power MOSFET plus monolithic schottky

PDF	12 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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Electrical characteristics

STSJ100NHS3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 24V

500

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 1mA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 10A

VGS= 4.5V, ID= 10A

0.0032

0.004

0.0042

0.0057

Ω

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 10A @125°C

VGS= 4.5V, ID= 10A @125°C

0.005

0.006

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =10V, ID = 15A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz, VGS=0

4200

700

46.2

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 15V, ID = 20A

VGS = 4.5V,

(see Figure 13)

8.5

7.2

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