STP12IE95F4 datasheet(4/11 Pages) STMICROELECTRONICS

номер детали	STP12IE95F4

подробное описание детали	Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm

PDF	11 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

4 / 11 page

Electrical characteristics

STP12IE95F4

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICS(SS)

Collector-source current

(VBS = VGS = 0)

VCE = 950V

100

µA

IBS(OS)

Base-source current

(IC = 0, VGS = 0)

VBS(OS) = 30V

µA

ISB(OS)

Source-base current

(IC = 0, VGS = 0)

VSB(OS) = 17V

100

µA

IGS(OS)

Gate-source leakage

VGS = ± 17V

100

VCS(ON)

Collector-source ON

voltage

VGS = 10V _IC = 12A IB = 2.4A

VGS = 10V_ IC = 6A

IB = 0.6A

0.6

hFE

DC current gain

VGS = 10V_ IC = 12A VCS = 1V

VGS = 10V_ IC = 6A_ VCS = 1V

VBS(ON) Base Source ON voltage

VGS = 10V_ IC = 12A IB = 2.4A

VGS = 10V_ IC = 6A_ IB = 0.6A

1.5

1.2

VGS(th)

Gate threshold voltage

VBS = VGS ______IB = 250µA

Ciss

Input capacitance

VCS =25V f =1MHz

VGS=0V

520

QGS(tot)

Gate-source Charge

VCS=25V

VGS=10V

VCB=0V

IC =4A

21.3

INDUCTIVE LOAD

Storage time

Fall time

VGS =10V

RG =47Ω

VClamp =720V

tp =4µs

IC =6A

IB =1.2A

610

INDUCTIVE LOAD

Storage time

Fall time

VGS =10V

RG =47Ω

VClamp =720V

tp =4µs

IC =6A

IB =0.6A

360

VCSW

Maximum collector-

source voltage switched

without snubber

RG =47Ω

hFE =5

IC = 12A

950

STP12IE95F4 датащи(PDF) 4 Page - STMicroelectronics

STP12IE95F4 датащи(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

датащи скачать

ссылки URL