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STB100NF04 датащи(PDF) 9 Page - STMicroelectronics

номер детали STB100NF04
подробное описание детали  N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
PDF  17 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STB100NF04 датащи(HTML) 9 Page - STMicroelectronics

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STB100NF04 - STP100NF04
Electrical characteristics
9/17
Figure 17.
Allowable Iav vs. Time in Avalanche
The previous curve give the safe operating area for unclamped inductive loads, single pulse
or repetitive, under the following conditions:
PD(AVE) = 0.5*(1.3*BVDSS*IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To de rate above 25°C, at fixed IAV, the following equation must be applied:
IAV=2*(Tjmax - TCASE) / (1.3*BVDSS * Zth)
Where:
Zth= K*Rth is the value coming from Normalized Thermal Response at fixed pulse width
equal to TAV



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