BUV298V datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

BUV298V

4/12

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector cut-off current

(RBE =5W)

VCE =VCEV

Tj =100°C

0.4

ICEV

Collector cut-off current

(VBE =-5V)

VCE =VCEV

Tj =100°C

0.4

IEBO

Emitter cut-off current

(IC =0)

VEB =5V

2mA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =0.2A

L =25mH

Vclamp =450V

450

hFE

DC current gain

IC =32A

VCE =5V

VCE(sat) (1) Collector-emitter

saturation voltage

IC =32A IB =6.4A

IC =32A IB =6.4A Tj =100°C

0.35

0.6

1.2

VBE(sat) (1)

Base-emitter saturation

voltage

IC =32A IB =6.4A

IC =32A IB =6.4A Tj =100°C

0.9

1.5

dic/dt

Rate of rise of On-state

collector

VCC =300V RC =0 tp=3µs

IB1 =9.6A

Tj =100°C

160

210

µs

VCE(3µs)

Collector-emitter

dynamic voltage

VCC =300V RC =9.3Ω

IB1 =9.6A

Tj =100°C

4.5

VCE(5µs)

Collector-emitter

dynamic voltage

VCC =300V RC =9.3Ω

IB1 =9.6A

Tj =100°C

2.5

Storage time

Fall time

Cross-over time

IC =32A

VCC =50V

VBB=-5V

RBB =0.39Ω

IB1 =6.4A

Vclamp =450V

L =78

µH

Tj =100°C

3.2

0.25

0.5

4.5

0.4

0.7

µs

VCEW

Maximum collector-

emitter voltage without

snubber

ICWoff =48A IB1 =6.4A

VBB=-5V

VCC =50V

L =52

µH

RBB =0.39Ω

Tj =125°C

450

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