BUV298AV datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 5

Ω)

VCE = VCEV

Tj = 100

0.4

ICEV

Collector Cut-off

Current (VBE = -5V)

VCE = VCEV

Tj = 100

0.4

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 0.2 A

L = 25 mH

Vclamp = 450 V

450

hFE

∗

DC Current Gain

IC = 32 A

VCE = 5 V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 32 A

IB = 6.4 A

IC = 32 A

IB = 6.4 A

Tj = 100

0.35

0.6

1.2

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 32 A

IB = 6.4 A

IC = 32 A

IB = 6.4 A

Tj = 100

0.9

1.5

diC/dt

Rate of Rise of

On-state Collector

VCC = 300 V

RC = 0

tp = 3

µs

IB1 = 9.6 A

Tj = 100

o C

160

210

µs

VCE(3

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 9.3

Ω

IB1 = 9.6 A

Tj = 100

o C

4.5

VCE(5

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 9.3

Ω

IB1 = 9.6 A

Tj = 100

o C

2.5

Storage Time

Fall Time

Cross-over Time

IC = 32 A

VCC = 50 V

VBB = -5 V

RBB = 0.39

Ω

Vclamp = 450 V

IB1 = 6.4 A

L = 78

µH

Tj = 100

o C

2.2

0.2

0.45

4.5

0.4

0.7

µs

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

ICWoff = 48 A

IB1 = 6.4 A

VBB = -5 V

VCC = 50 V

L = 52

µH RBB = 0.39 Ω

Tj = 125

450

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUV298AV

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