BULT118_03 datasheet(2/7 Pages) STMICROELECTRONICS

номер детали	BULT118

подробное описание детали	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	7 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

2.77

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 700 V

Tj = 125

o C

100

500

µA

VEBO

Emitter-Base Voltage

IE = 10 mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

400

ICEO

Collector-Emitter

Leakage Current

VCE = 400 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

1.0

1.2

1.3

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.5 A

VCE = 5 V

IC = 2 A

VCE = 5 V

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

VCC = 125 V

IC = 1 A

IB1 = 0.2 A

IB2 = -0.2 A

0.4

3.2

0.25

0.7

4.5

0.4

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 1 A

IB1 = 0.2 A

VBE = -5 V

L = 50 mH

Vclamp = 300 V

0.8

0.16

µs

∗ Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %

BULT118

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