BUF460AV_03 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.41

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 5

Ω)

VCE = VCEV

Tj = 100

0.2

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = VCEV

Tj = 100

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.2 A

L = 25 mH

Vclamp = 450 V

450

hFE

∗

DC Current Gain

IC = 60 A

VCE = 5 V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 30 A

IB = 3 A

IC = 30 A

IB = 3 A

Tj = 100

IC = 60 A

IB = 12 A

IC = 60 A

IB = 12 A

Tj = 100

0.35

0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 60 A

IB = 12 A

IC = 60 A

IB = 12 A

Tj = 100

o C

1.1

1.5

diC/dt

Rate of Rise of

On-state Collector

VCC = 300 V

RC = 0

tp = 3

µs

IB1 = 18 A

Tj = 100

150

µs

VCE(3

µs)• Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 30

Ω

IB1 = 18 A

Tj = 100

o C

VCE(5

µs)• Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC = 30

Ω

IB1 = 18 A

Tj = 100

o C

Storage Time

Fall Time

Cross-over Time

IC = 30 A

VCC = 50 V

VBB = -5 V

RBB = 0.2

Ω

Vclamp = 400 V

IB1 = 3 A

L = 25

µH

Tj = 100

o C

4.5

0.1

0.3

0.2

µs

VCEW

Maximum Collector

Emitter Voltage

Without Snubber

ICWoff = 80 A

IB1 = 16 A

VBB = -5 V

VCC = 50 V

L = 80

µH

RBB = 0.2

Ω

Tj = 125

400

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUF460AV

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