BUL416B datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

BUL416

2/8

Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

# Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups ac-

cording to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Value

Unit

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.14

62.5

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE =0 V)

VCE = 1600 V

Tj = 125 oC

100

500

µA

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 800 V

250

µA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 100 mA

L = 25 mH

800

VEBO

Emitter-Base Voltage

(IC = 0 )

IE = 10 mA

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

IC = 4 A

IB = 1.33 A

1.5

VBE(sat)* Base-Emitter Saturation

Voltage

IC = 2 A

IB = 0.4 A

IC = 4 A

IB = 1.33 A

1.2

1.5

hFE*

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.7 A

VCE = 5 V

Group A

Group B

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 3 A

IB1 = 1 A

VBE(off) = -5 V

RBB = 0 W

Vclamp = 200 V

L = 200 µH

(see figure 12)

2.3

650

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 3 A

IB1 = 1 A

VBE(off) = -5 V

RBB = 0 W

Vclamp = 200 V

L = 200 µH

Tj = 100 oC

(see figure 12)

680

µs

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