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STP95N4F3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STP95N4F3
подробное описание детали  N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP95N4F3 датащи(HTML) 5 Page - STMicroelectronics

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STD95N4F3 - STP95N4F3 - STU95N4F3
Electrical characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
15
50
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=20V, ID= 40A,
RG=4.7Ω, VGS=10V
(see Figure 15)
40
15
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=80A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A,
di/dt = 100A/µs,
VDD=30V, Tj=150°C
(see Figure 14)
45
60
2.8
ns
nC
A



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