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PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

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Product data sheet

5 February 2013

2 / 13

5. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

D

drain

3

S

source

1 2

mb

3

TO-220AB (SOT78)

S

D

G

mbb076

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PSMN4R2-60PL

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

7. Marking

Table 4.

Marking codes

Type number

Marking code

PSMN4R2-60PL

PSMN4R2-60PL

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

60

V

VDGR

drain-gate voltage

RGS = 20 kΩ

-

60

V

VGS

gate-source voltage

-20

20

V

Tmb = 25 °C; VGS = 10 V; Fig. 1

[1]

-

130

A

ID

drain current

Tmb = 100 °C; VGS = 10 V; Fig. 1

-

124

A

IDM

peak drain current

Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4

-

701

A