Nexperia

PSMN2R3-80SSF

NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package

aaa-035324

0

1

2

3

4

0

100

200

300

400

VDS (V)

ID

ID

(A)

(A)

4.5 V

4.5 V

5 V

5 V

VGS = 5.5 V

VGS = 5.5 V

6 V

6 V

6.5 V

6.5 V

10 V

10 V

Tj = 25 °C

Fig. 8. Output characteristics; drain current as a

function of drain-source voltage; typical values

aaa-035325

0

4

8

12

16

20

0

2

4

6

8

VGS (V)

RDSon

RDSon

(mΩ)

(mΩ)

Tj = 25 °C; ID = 25 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-035326

0

1

2

3

4

5

6

7

8

0

100

200

300

400

VGS (V)

ID

ID

(A)

(A)

Tj = 25°C

Tj = 25°C

175°C

175°C

VDS = 8 V

Fig. 10. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-011501

0

1

2

3

4

5

10-6

10-5

10-4

10-3

10-2

10-1

VGS (V)

ID

ID

(A)

(A)

Tj = 25 °C; VDS = 5 V

Fig. 11. Sub-threshold drain current as a function of

gate-source voltage

PSMN2R3-80SSF

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Preliminary data sheet

22 August 2022

7 / 13