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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2STW4468 датащи(PDF) 1 Page - STMicroelectronics |
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2STW4468 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  February 2007 Rev 3 1/9 9 2STW4468 High power NPN epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO=140V ■ Complementary to 2STW1695 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC ■ In compliance with the 2002/93/EC European Directive Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Order codes Internal schematic diagram TO-247 1 2 3 Part Number Marking Package Packing 2STW4468 2STW4468 TO-247 Tube www.st.com |
Аналогичный номер детали - 2STW4468 |
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Аналогичное описание - 2STW4468 |
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