DA9279.003

13 July 2006

2 (10)

PIN DESCRIPTION

Pin Description

Symbol

x-coordinate

y-coordinate

Note

Power Supply Voltage

VDD

149

1340

Programming Input

PV

561

1340

Serial Bus Clock Input

CLK

1000

1340

Serial Bus Data Input

DA

1565

1340

Temperature Output

TE1

2024

1340

3

Test Multiplexer Output

TE2

2016

140

3

Voltage Control Input

VC

147

140

Crystal Oscillator Output

X1

1261

140

Crystal/Varactor Oscillator Input

X2

518

140

Power Supply Ground

VSS

1549

140

Buffer Output

OUT

1810

140

Note: Because the substrate of the die is internally connected to GND, the die has to be connected to GND or

left floating. Make sure that GND is the first pad to be bonded. Pick-and-place and all component assembly are

recommended to be performed in ESD protected area.

Note: Pad coordinates are measured from the left bottom corner of the chip to the center of the pads. The

coordinates may vary depending on sawing width and location, however, distances between pads are accurate.

Note 3: Valid for MAS9279A1, A3, A5 and A7. In MAS9279A2, A4, A6 and A8 TE1 and TE2 pins have been

swapped.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Min

Max

Unit

Note

Supply Voltage

-0.3

6.0

V

Input Pin Voltage

V

1)

Power Dissipation

100

mW

Storage Temperature

-55

150

ESD Rating; HBM

2

kV

2)

Note 1: Not valid for programming pin PV

Note 2: In X1 and X2 pins maximum ESD rating is 1.5kV

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Note

Supply Voltage

2.7

3.3

5.5

V

Supply Current

Vdd = 3.3 Volt

6.0

mA

1

Operating Temperature

-40

+85

Crystal Pulling Sensitivity

S

24

28

35

ppm/pF

2

Crystal Pulling Sensitivity

S

28

33

38

ppm/pF

3

Crystal Load Capacitance

Vc = 1.2V

8

pF

2

Crystal Load Capacitance

Vc = 1.2V

10

pF

3

Note 1: At 26MHz crystal

Note 2: MAS9279A1, MAS9279A3, MAS9279A5, MAS9279A7

Note 3: MAS9279A2, MAS9279A4, MAS9279A6, MAS9279A8