2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

s

STMicrolectronics PREFERRED

SALESTYPE

s

HIGH GAIN

s

NPN DARLINGTON

s

HIGH CURRENT

s

HIGH DISSIPATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The 2N6059 is a silicon Epitaxial-Base NPN

transistor in monolithic Darlington configuration

mounted in Jedec TO-3 metal case.

It is inteded for use in power linear and low

frequency switching applications.

INTERNAL SCHEMATIC DIAGRAM

February 2003

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

100

V

100

V

100

V

5

V

Collector Current

12

A

20

A

Base Current

0.2

A

150

W

Storage Temperature

-65 to 200

Max. Operating Junction Temperature

200

Ω

Ω

®

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