2N6036 datasheet(2/6 Pages) STMICROELECTRONICS

номер детали	2N6036

подробное описание детали	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	6 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

83.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = rated VCEO

Tc = 125

o C

0.1

0.5

ICBO

Collector Cut-off

Current (IE = 0)

VCE = rated VCBO

0.1

ICEO

Collector Cut-off

Current (IB = 0)

VCE = rated VCEO

0.1

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 8 mA

IC = 4 A

IB = 40 mA

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4 A

IB = 40 mA

VBE

∗

Base-Emitter Voltage

IC = 2 A

VCE = 3 V

2.8

hFE

∗

DC Current Gain

IC = 0.5 A

VCE = 3 V

IC = 2 A

VCE = 3 V

IC = 4 A

VCE = 3 V

500

750

100

15000

hfe

Small Signal Current

Gain

IC = 0.75 A

VCE = 10 V

f = 1KHz

CCBO

Collector Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

for NPN types

for PNP types

100

200

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

2N6036/2N6039

2/6

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