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M29F400BT датащи(PDF) 27 Page - STMicroelectronics |
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M29F400BT датащи(HTML) 27 Page - STMicroelectronics |
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27 / 40 page ![]() M29F400BT, M29F400BB Program and erase times and endurance cycles 27/40 7 Program and erase times and endurance cycles The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 8. Exact erase times may change depending on the memory array condition. Table 8. Program/ Erase times endurance cycles(1) 1. TA = 0 to 70°C, –40 to 85°C or –40 to 125°C Parameter Min Typ(2) 2. TA = 25°C, VCC = 5V. Typical after 100k W/E Cycles (2) Max Unit Chip Erase (All bits in the memory set to ‘0’) 1.5 1.5 s Chip Erase 5 5 20 s Block Erase (64 Kbytes) 0.6 0.6 4 s Program (Byte or Word) 8 8 150 µs Chip Program (Byte by Byte) 4.5 4.5 18 s Chip Program (Word by Word) 2.3 2.3 9 s Program/Erase Cycles (per Block) 100,000 cycles |
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