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BTD21520 датащи(PDF) 8 Page - BASIC SEMICONDUCTOR |
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BTD21520 датащи(HTML) 8 Page - BASIC SEMICONDUCTOR |
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8 / 19 page ![]() www.basicsemi.com 8/19 Rev.0.0 Dual-ChannelIsolatedGateDriver BTD21520x (Continued) SwitchingParameters tPLH Propagation delay from INx to OUTx rising edges - - 40 - ns tPHL Propagation delay from INx to OUTx falling edges - - 45 - tr Output rise time CL=1nF, 20% to 80% - 10 26 ns tf Output fall time CL=1nF, 90% to 10% - 10 26 tPWD Pulse width distortion (tPHL-tPLH) - - - 5 tDM Propagation delays matching between VOUT1, VOUT2 f=100kHz, IN1=IN2 - - 5 DT Dead time DT pull up to VCC Two output channels are completely independent - DT pin open (not recommended) - 8 15 ns RDT=20kΩ 160 200 240 - Undervoltage lockout recovery time tVCC+ to OUT - - 40 - us tVDD+ to OUT - - 50 - CMTI Common-mode transient immunity INx fixed to GND or VCC, VCM=1500V 100 - - kV/us (1) CL:Load capacitance from output pin OUT to VEE. 7.7WIDE-BODYPACKAGE(SOW-16)SAFETYPARAMETERS Symbol PARAMETER TESTCONDITIONS MIN TYP MAX UNIT CLR External clearance Shortest pin-to-pin distance through air 8.5 - - mm CPG External creepage Shortest pin-to-pin distance across the package surface 8.5 - - DTI Distance through insulation Minimum internal gap (internal clearance) of the double insulation (2×10.5 µm) 17 - - um CTI Comparative tracking index DIN EN 60112 600 - - V - Overvoltage category Voltage rating <600Vrms I-III - - - Voltage rating <1000Vrms I-II - - VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 - - VPK VIOWM Maximum working isolation voltage AC voltage (sine wave); time dependent dielectric breakdown 1500 - - Vrms VIOTM Maximum transient isolation voltage 100% VIOTM, 60s, 120% VIOTM, 1s 7000 - - VPK VIOSM Maximum surge isolation voltage IEC 62368-1, 1.2/50us waveform, 1.6 x VIOSM 8000 - - Qpd Apparent charge Method a, After Input/Output safety test subgroup 2/3.VIN= VIOTM, 60s, Vpd=1.2 VIOTM, 10s - - 5 pC Method a, After environmental tests subgroup 1. VIN=VIOTM, 60s, Vpd=1.6VIOTM, 10s - - 5 Method b1; At routine test (100% production) and preconditioning (type test) VIN=1.2VIOTM, 1s, Vpd=1.875VIOTM, 1s - - 5 CIO Barrier capacitance, input to output VIO=0.4Vpeak, f=1MHz, sine wave - 1.2 - pF RIO Isolation resistance, input to output Test voltage of 500V, TA=25℃ 1012 - - Ω Test voltage of 500V, 100℃<TA<125℃ 1011 - - Test voltage of 500V, TA=150℃ 109 - - VISO Pollution degree - - 2 - - Withstand isolation voltage VTEST=VISO=5000Vrms, t=60 sec(qualification), VTEST=1.2×VISO=6000Vrms, t=1 sec(100% production) 5000 - - Vrms |
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