©2005 SST Communications Corp.

S71284-00-000

1/05

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•Gain:

– ~24 dB gain across the 4.9-5.8 GHz band

•

High linear output power:

– ~25 dBm P1dB

– EVM~4% at 18 dBm over 4.9-5.8 GHz for 64

QAM/54 Mbps operation

– ACPR below IEEE 802.11a Mask up to 21 dBm

across full band

•

Low idle current

•

Low shut-down current (< 1 µA)

•

20 dB dynamic range on-chip differential linear

power detection

•

Simple RF matching circuits

•

Packages available

– 16-contact VQFN (3mm x 3mm)

– Non-Pb (lead-free) packages available

APPLICATIONS:

•

WLAN (IEEE 802.11a)

•Japan WLAN

•

HyperLAN2

•

Multimedia

PRODUCT DESCRIPTION

The SST11LP11 is a high-performance power amplifier IC

based on the highly-reliable InGaP/GaAs HBT technology.

The SST11LP11 is designed to operate over the entire

WLAN 802.11a band between 4.9-5.8 GHz frequency

band for the U.S., European, and Japanese markets while

achieving highly-linear power and low EVM.

The SST11LP11 power amplifier IC features easy board-

level usage along with on-chip linear power detection and

power-down control. These features coupled with low cur-

rent draw at maximum linear power make the SST11LP11

ideal for battery-powered 802.11a WLAN transmitter appli-

cations.

The SST11LP11 is offered in 16-contact VQFN package.

See Figure 1 for pin assignments and Table 1 for pin

descriptions.

4.9-5.8 GHz High-Linearity Power Amplifier

SST11LP11

SST11LP114.9-5.8 GHz High-Linearity Power Amplifier