UTT50N06H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R209-208.D

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

ID

50

A

Pulsed (Note 2)

IDM

100

A

Avalanche Current (Note 2)

IAR

10

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

54

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.3

V/ns

Power Dissipation (Note 4)

TO-220

PD

146

W

TO-252

56

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=0.1mH, IAS=33A, VDD=25V, RG=25 Ω, Starting TJ = 25°C

4. ISD ≤ 30A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

θJA

62.5

°C/W

TO-252

110

°C/W

Junction to Case

TO-220

θJC

0.85

°C/W

TO-252

2.2 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.