Nexperia

PMPB09R5TP

20 V, P-channel Trench MOSFET

aaa-034925

-1

-10-1

-10

-102

ID

(A)

-10-2

VDS (V)

-10-1

-102

-10

-1

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB09R5TP

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

28 April 2022

4 / 14