Nexperia

PMPB07R3EN

30 V, N-channel Trench MOSFET

VDS (V)

0

4

3

1

2

aaa-032393

20

10

30

40

ID

(A)

0

VGS = 2.2 V

2.5 V

4.5 V

2.8 V

3.2 V

10 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

aaa-032394

VGS (V)

0

3

2

1

10-4

10-5

10-3

ID

(A)

10-6

min

typ

max

VDS = 5 V; Tj = 25 °C

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID (A)

0

40

30

10

20

aaa-032395

20

10

30

40

RDSon

0

VGS = 10 V

2.6 V

2.8 V

3.2 V

4.5 V

3.6 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0

20

15

5

10

aaa-032396

20

10

30

40

RDSon

0

Tj = 150 °C

Tj = 25 °C

ID = 12 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PMPB07R3EN

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Nexperia B.V. 2023. All rights reserved

Product data sheet

18 August 2023

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