AS4CM4EOQ datasheet(1/16 Pages) ALSC

номер детали	AS4CM4EOQ

подробное описание детали	4M X 4 CMOS Quad CAS DRAM (EDO) family

PDF	16 Pages

Scroll/Zoom	100%

производитель	ALSC [Alliance Semiconductor Corporation]

домашняя страница	https://www.alliancememory.com

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1 / 16 page

March 2001

®

AS4C4M4EOQ

AS4C4M4E1Q

4M ✕ 4 CMOS QuadCAS DRAM (EDO) family

3/22/01; v.1.0

Alliance Semiconductor

P. 1 of 16

Features

• Organization: 4,194,304 words × 4 bits

• High speed

- 50/60 ns RAS access time

- 25/30 ns column address access time

- 12/15 ns CAS access time

• Low power consumption

- Active: 495 mW max

- Standby: 5.5 mW max, CMOS I/O

• Extended data out

•Refresh

- 4096 refresh cycles, 64 ms refresh interval for

4C4M4EOQ

- 2048 refresh cycles, 32 ms refresh interval for

AS4C4M4E1Q

-RAS-only and hidden refresh or CAS-before-RAS refresh

or self-refresh

• TTL-compatible

•4 separate CAS pins allow for separate I/O operation

• JEDEC standard package

- 300 mil, 28-pin SOJ

- 300 mil, 28-pin TSOP

• 5V power supply

• Latch-up current

≥ 200 mA

• ESD protection

≥ 2000 mV

Pin arrangement

A8

A7

A6

A5

A4

A10

A0

A1

A2

A3

VCC

GND

I/O3

I/O2

CAS3

OE

VCC

I/O0

I/O1

WE

RAS

1

2

3

4

5

28

27

26

25

24

*NC/A11

A9

623

9

10

11

12

13

20

19

18

17

16

14

15

SOJ

A8

A7

A6

A5

A4

A10

A0

A1

A2

A3

VCC

GND

I/O3

I/O2

CAS3

OE

VCC

I/O0

I/O1

WE

RAS

1

2

3

4

5

28

27

26

25

24

*NC/A11

A9

623

9

10

11

12

13

20

19

18

17

16

14

15

TSOP

* NC on 2K refresh version; A11 on 4K refresh version

CAS0

CAS1

7

8

CAS2

22

21

NC

CAS0

CAS1

7

8

NC

22

21

CAS2

Pin designation

Pin(s)

Description

A0 to A11

Address inputs

RAS

Row address strobe

CAS

Column address strobe

WE

Write enable

I/O0 to I/O3

Input/output

OE

Output enable

VCC

Power

GND

Ground

NC

No Connection

Selection guide

Symbol

4C4M4EOQ/E1Q-50

4C4M4EOQ/E1-60

Unit

Maximum RAS access time

tRAC

50

60

ns

Maximum column address access time

tCAA

25

30

ns

Maximum CAS access time

tCAC

12

15

ns

Maximum output enable (OE) access time

tOEA

13

15

ns

Minimum read or write cycle time

tRC

85

100

ns

Minimum hyper page mode cycle time

tPC

20

24

ns

Maximum operating current

ICC1

110

100

mA

Maximum CMOS standby current

ICC5

1.0

mA

Аналогичный номер детали - AS4CM4EOQ

производитель	номер детали	датащи	подробное описание детали
Austin Semiconductor	AS4C1024	5Mb / 11P	FAST PAGE MODE REV. 10
	AS4C1259	1Mb / 10P	FAST PAGE MODE REV. 10
	AS4C1259883C	27Mb / 10P	256K x 1 DRAM
Alliance Semiconductor ...	AS4C128M16D2	2Mb / 75P	Auto Refresh and Self Refresh
Alliance Semiconductor ...	AS4C128M16D2-25BCN	2Mb / 75P	Auto Refresh and Self Refresh

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Аналогичное описание - AS4CM4EOQ

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KM44C4003C	376Kb / 20P	4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
Samsung semiconductor	KM44C4005C	378Kb / 20P	4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
Siemens Semiconductor G...	HYM324025S	52Kb / 10P	4M x 32-Bit EDO-DRAM Module
	HYM364035S	476Kb / 10P	4M x 36-Bit EDO-DRAM Module
	HYM64V4005GU-50	95Kb / 17P	3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
	HYM72V4005GS-50-	70Kb / 11P	4M x 72-Bit EDO-DRAM Module
Hynix Semiconductor	HY51VS17403HG	96Kb / 11P	4M x 4Bit EDO DRAM
Hynix Semiconductor	HY51VS65163HG	96Kb / 11P	4M x 16Bit EDO DRAM
Samsung semiconductor	KMM5361205C2W	289Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Samsung semiconductor	KMM5362205C2W	296Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh

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