Philips Semiconductors

PHT6N06T

TrenchMOS™ standard level FET

Product data

Rev. 02 — 03 February 2003

3 of 12

9397 750 10633

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

VGS ≥ 10 V

Fig 1.

Normalized total power dissipation as a

function of solder point temperature.

Fig 2.

Normalized continuous drain current as a

function of solder point temperature.

Tsp =25 °C; IDM is single pulse; VGS =10V.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

0

40

80

120

0

50

100

150

200

(%)

Tsp (°C)

Pder

03aa25

0

40

80

120

0

50

100

150

200

Tsp (°C)

Ider

(%)

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

003aaa313

10-2

10-1

1

10

102

1

10

102

VDS (V)

ID

DC

Limit RDSon = VDS/ID

(A)

tp = 10 µs

100

µs

1 ms

10 ms

100 ms