Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ302AX

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

control systems, etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CBO

Collector-Base voltage (open emitter)

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

500

V

I

C

Collector current (DC)

-

2

A

I

CM

Collector current peak value

-

3

A

P

tot

Total power dissipation

T

-

18

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.0

V

t

f

Fall time

Ic=1A,I

145

160

ns

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector to emitter voltage

V

-

1000

V

V

CEO

Collector to emitter voltage (open base)

-

500

V

V

CBO

Collector to base voltage (open emitter)

-

1000

V

I

C

Collector current (DC)

-

2

A

I

CM

Collector current peak value

-

3

A

I

B

Base current (DC)

-

0.75

A

I

BM

Base current peak value

-

1

A

P

tot

Total power dissipation

T

-

18

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

7.2

K/W

R

th j-a

Junction to ambient

in free air

55

-

K/W

12 3

case

b

c

e

August 1998

1

Rev 1.000