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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L6730C датащи(PDF) 19 Page - STMicroelectronics |
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L6730C датащи(HTML) 19 Page - STMicroelectronics |
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19 / 50 page  L6730C - L6730D Device description 19/50 5.7 Driver section The high-side and low-side drivers allow using different types of power MOSFETs (also multiple MOSFETs to reduce the RDS(on)), maintaining fast switching transitions. The low-side driver is supplied by VCCDR while the high-side driver is supplied by the BOOT pin. A predictive dead time control avoids MOSFETs cross-conduction maintaining very short dead time duration (see Figure 10.). The control monitors the phase node in order to sense the low-side body diode recirculation. If the phase node voltage is less than a certain threshold (-350mV typ.) during the dead time, it will be reduced in the next PWM cycle. The predictive dead time control doesn’t work when the high-side body diode is conducting because the phase node doesn’t go negative. This situation happens when the converter is sinking current for example and, in this case, an adaptive dead time control operates. Figure 10. Dead times |
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