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H4001PCB датащи(PDF) 2 Page - EM Microelectronic - MARIN SA |
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H4001PCB датащи(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 5 page ![]() Absolute Maximum Ratings 2 Handling Procedures This device has built-in protection against high static voltages or electric fields; however, due to the unique properties of this device, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified proper operation can only occur when all terminal voltages are kept within the supply voltage range. Unused inputs must always be tied to a defined logic voltage level. 30 mA +200 °C - 55 °C 750 V Table 1 Maximum AC peak current induced on COIL1 and COIL2 Maximum storage temperature Minimum storage temperature Electrostatic discharge maximum to MIL-STD-883C method 3015 Parameter Symbol Condition Icoil Tstoremax Tstoremin VESD VCOIL2 = 0V VCOIL1 = 3.5Vpp Sine Wave Timing Characteristics Table 4 Parameter Symbol Min Typ Max Coil Clock frequency Ratio between coil period and bit period Manchester code PSK fCOIL Rmch Rpsk 50 130 64 16 400 Unit kHz Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Operating Conditions Table 2 Operating Temperature AC Supply Voltage Supply Frequency TA Vcoil fcoil +85 400 °C Vpp KHz Parameter Symbol Min Typ Max Unit -40 3.5 50 Symbol Electrical Characteristics Vcoil = 3.5Vpp ±5% fcoil =130KHz Sine Wave TA = 25°C unless otherwise specified Table 3 Parameter Typ. Max Unit Min Test Conditions Demodulated Voltage Dynamic Current Udemod Idyn VAC µA 50 10 K Ω COIL1 COIL2 R 10 nF LM310 1N4148 U COIL = 3.5 Vpp Manchester PSK : R = 3 K Ω : R = 820 Ω 0.25 130 H4001 ® EMMICROELECTRONIC-MARINSA |
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