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2N2605 датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N2605
подробное описание детали  PNP SILICON LOW POWER TRANSISTOR
PDF  2 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2605 датащи(HTML) 2 Page - Microsemi Corporation

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2N2604, 2N2605 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
2N2604
2N2605
IC = 500 µAdc, VCE = 5.0 Vdc
2N2604
2N2605
IC = 10 mAdc, VCE = 5.0 Vdc
2N2604
2N2605
hFE
40
100
60
150
40
100
120
300
180
450
160
400
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
VCE(sat)
0.3
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 500 µAdc
VBE(sat)
0.7
0.9
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
2N2604
2N2605
hie
1.0
2.0
10
20
k
Ω
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
2N2604
2N2605
hoe
40
60
µmhos
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz
2N2604
2N2605
hfe
60
150
180
450
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz
h
fe
1.0
8.0
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
6.0
pF
Noise Figure
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 100 Hz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 1.0 kHz
VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 10 kHz
F1
F2
F3
5.0
3.0
3.0
dB
(2) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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