поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

ESDM3032 датащи(PDF) 2 Page - ON Semiconductor

номер детали ESDM3032
подробное описание детали  ESD Protection Diode
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDM3032 датащи(HTML) 2 Page - ON Semiconductor

  ESDM3032 Datasheet HTML 1Page - ON Semiconductor ESDM3032 Datasheet HTML 2Page - ON Semiconductor ESDM3032 Datasheet HTML 3Page - ON Semiconductor ESDM3032 Datasheet HTML 4Page - ON Semiconductor ESDM3032 Datasheet HTML 5Page - ON Semiconductor ESDM3032 Datasheet HTML 6Page - ON Semiconductor ESDM3032 Datasheet HTML 7Page - ON Semiconductor ESDM3032 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Bi−Directional
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
ESDM3032
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
3.3
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
4.1
5.7
V
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
100
nA
Clamping Voltage TLP
(Note 2)
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±8 kV Air)
7.2
V
IPP = 16 A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±16 kV Air)
8.5
V
Reverse Peak Pulse Current
IPP
IEC61000−4−5 (8/20 ms)
7.5
8.5
A
Clamping Voltage (8/20 ms)
(Note 3)
VC
IPP = 7.5 A
8.5
9.7
V
Dynamic Resistance
RDYN
100 ns TLP Pulse
0.16
W
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
8.5
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
TYPICAL CHARACTERISTICS
Figure 1. ESD Clamping Voltage − Pin 1 to Pin 2
8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage − Pin 2 to Pin 1
8 kV Contact per IEC61000−4−2
TIME (ns)
−20
−10
0
10
20
30
40
50
−20
0
20
40
60
80
100
120
TIME (ns)
−50
−40
−30
−20
−10
0
10
20
−20
0
20
40
60
80
100
120
140
−30
30
140



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com