7-32
Model 7721 Series
Parameter
Symbol
Conditions1
Min.
Typ.
Max.
Units
Q1-Q4 IGBT
Continuous Collector Current
IC
TC = 25°C
40
A
TC = 100°C
22
A
Pulsed Collector Current
ICM
80
A
Reverse Avalanche Energy
EAVR
15
mJ
Collector Leakage Current
ICES
VGE = 0V, VCE = 500V
250
µA
Saturation Voltage
VCE(ON)
IC = 22A, VGE = 15V
2.4
3.0
V
IC = 40A, VGE = 15V
2.8
V
Gate Threshold Voltage
VGE(TH)
VCE = VGE, IC = 250µA
3.0
5.5
V
Gate Leakage Current
IGES
VGE = ±20V
±100
nA
Total Gate Charge (turn on)
Qg
IC = 22A, VCC = 400V,VGE = 15V
55
83
nC
Gate Emitter Charge (turn on)
Qge
IC = 22A, VCC = 400V,VGE = 15V
11
17
nC
Gate Collector Charge (turn on)
Qgc
IC = 22A, VCC = 400V,VGE = 15V
19
29
nC
Turn Off Delay Time
td(off)
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
100
150
ns
Fall Time
tf
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
56
100
ns
Total Switching Loss
Ets
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
.55
.70
mJ
Input Capacitance
Cies
VGE = 0V, VCC = 30V, f = 1MHz
1400
pF
Output Capacitance
Coes
VGE = 0V, VCC = 30V, f = 1MHz
250
pF
Reverse Transfer Capacitance
Cres
VGE = 0V, VCC = 30V, f = 1MHz
42
pF
Junction Temperature
TJ
150
°C
Thermal Resistance
Rthjc
.94
°C/W
D1-D4 Fred Diodes
Reverse Leakage Current
IR
VR = 600V
20
µA
VR = .8x600V, TJ = 125°C
1.5
mA
Forward Voltage
VF
IF = 8A
1.5
V
IF = 8A, TJ = 150°C
1.3
V
Reverse Recovery Time
trr
IF = 1A, -di/dt = 50A/µs, VR = 30V
35
50
ns
Junction Temperature
Tj
150
°C
Thermal Resistance
Rthjc
3.1
°C/W
TH1 NTC Thermistor
Resistance
R25
I = 1mA
22.5
25
27.5
K
Ω
Resistance Ratio
RT/R25
t = 80°C
.126
t = 90°C
.0916
t = 100°C
.0679
t = 110°C
.0511
Dissipation Constant
PD
1.0
mW/°C
Thermal Time Constant
t
10
sec
ELECTRICAL CHARACTERISTICS (7721-1A)
1 - TCase = 25°C unless otherwise specified.
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