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MURL2020CT датащи(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

номер детали MURL2020CT
подробное описание детали  20.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
PDF  2 Pages
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производитель  THINKISEMI [Thinki Semiconductor Co., Ltd.]
домашняя страница  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

MURL2020CT датащи(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  MURL2020CT Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. MURL2020CT Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
TO-220AB/TO-220-3L
Unit:inch(mm)
※
ThinkiSemi latest&matured process FRD/FRED
※
Low forward voltage drop
※
High current capability
※
Low reverse leakage current
※
Low reverse leakage current
※
High surge current capability
Application
※
Automotive Inverters and Solar Inverters
※
Car Audio Amplifiers and Sound Device Systems
※
Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※
Case: Heatsink open metal TO-220AB/TO-220-3L package
※
Epoxy: UL 94V-0rateflame retardant
※
Epoxy: UL 94V 0 rate flame retardant
※
Terminals: Solderable per MIL-STD-202 method 208
※
Polarity: As marked on diode body
※
Mounting position: Any
※
Weight: 2.0 gram approximately
MURL2020CT thru MURL20120CT
Pb Free Plating Product
MURL2020CT thru MURL20120CT
Pb
20.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
Positive
Negative
Common Cathode
Case
Case
Common Anode
Doubler
Case
Doubler Polarity
Case
Series
Series Connection
Prefix "MURA"
Prefix "MURR"
Prefix "MURL"
Prefix "MUR"
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.07T
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
VRRM
200
400
600
800
1000
1200
V
VRMS
140
280
420
560
700
840
V
VDC
200
400
600
800
1000
1200
V
IF(AV)
A
IFSM
A
VF
(Typical)
IR
μA
μA
Trr
nS
CJ
pF
RθJC
℃
/W
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Typical Junction Capacitance (Note 2)
100
Typical Thermal Resistance (Note 3)
1.5
Operating Junction and Storage
Temperature Range
-55 to +175
Maximum Reverse Recovery Time (Note1)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125℃
(Total Device 2x10.0A=20.0A)
20.0
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
200
Maximum Instantaneous Forward Voltage
@10.0A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
5.0
500
1.40-1.80
MURL2020CT
MURL2040CT
MURL2060CT
MURL2080CT
MURL20100CT MURL20120CT
35-50
50-75
0.90-1.10
1.10-1.40
1.40-1.80
V
MURL2030CT


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