Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUJ100AT

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

Collector cut-off current

1

V

-

2.5

100

µA

I

CES

V

-

15

500

µA

T

I

CEO

Collector cut-off current

V

-

-

100

µA

I

EBO

Emitter cut-off current

V

-

0.02

100

µA

V

CEOsust

Collector-emitter sustaining voltage

I

400

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

0.23

1.0

V

V

BEsat

Base-emitter saturation voltage

I

-

0.95

1.3

V

h

FE

DC current gain

I

11

20

27

h

FE

I

12.5

21

31

h

FE

I

9

14

20

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

R

t

on

Turn-on time

0.65

0.88

µs

t

s

Turn-off storage time

0.88

1.2

µs

t

f

Turn-off fall time

250

338

ns

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

0.51

0.7

µs

t

f

Turn-off fall time

50

70

ns

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

-

1.4

µs

t

f

Turn-off fall time

-

130

ns

1 Measured with half sine-wave voltage (curve tracer).

September 1999

2

Rev 1.000