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MCP73871 датащи(PDF) 4 Page - Microchip Technology |
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MCP73871 датащи(HTML) 4 Page - Microchip Technology |
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4 / 36 page ![]() MCP73871 DS20002090F-page 4 2008-2022 Microchip Technology Inc. and its subsidiaries 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VIN.....................................................................................................................................................................................................7.0V All Inputs and Outputs w.r.t. .................................................................................................................................VSS–0.3V to VDD+0.3V (VDD =VIN or VBAT) Maximum Junction Temperature, TJ ............................................................................................................................. Internally Limited Storage temperature ..................................................................................................................................................... –65°C to +150°C ESD protection on all pins Human Body Model (1.5 k in Series with 100 pF) 4kV Machine Model (200 pF, No Series Resistance) .............................................................................................................................. 300V †Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VIN =VREG + 0.3V to 6V, TA = -40°C to +85°C. Typical values are at +25°C, VIN =[VREG (typical) + 1.0V] Parameters Sym Min Typ Max Units Conditions Supply Input Supply Voltage VIN VREG +0.3V — 6 V Supply Current ISS — 2500 3750 µA Charging — 260 350 µA Charge Complete — 180 300 µA Standby — 28 50 µA Shutdown (VDD < VBAT – 100 mV or VDD <VSTOP) UVLO Start Threshold VSTART VREG +0.05V VREG +0.15V VREG + 0.25V V VDD = Low-to-High UVLO Stop Threshold VSTOP VREG –0.07V VREG +0.07V VREG + 0.17V V VDD =High-to-Low UVLO Hysteresis VHYS —90 — mV Voltage Regulation (Constant Voltage Mode) Regulated Charge Voltage VREG 4.080 4.10 4.121 V VDD =[VREG(typical) + 1V] IOUT =10mA TA = -5°C to +55°C 4.179 4.20 4.221 V 4.328 4.35 4.372 V 4.378 4.40 4.422 V Regulated Charge Voltage Tolerance VRTOL –0.5 — +0.5 % TA = +25°C –0.75 — +0.75 % TA = -5°C to +55°C Line Regulation VBAT/VBAT) / VDD| — 0.08 0.20 %/V VDD =[VREG(typical) + 1V] to 6V IOUT =10mA Load Regulation VBAT/VBAT| — 0.08 0.18 % IOUT = 10 mA to 150 mA VDD =[VREG(typical) + 1V] Supply Ripple Attenuation PSRR — -47 — dB IOUT =10mA, 1kHz —-40 — dB IOUT =10mA, 10 kHz Note 1: The value is ensured by design and not production tested. 2: The maximum available charge current is also limited by the value set at PROG1 input. |
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