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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCP16311/2 датащи(PDF) 17 Page - Microchip Technology |
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MCP16311/2 датащи(HTML) 17 Page - Microchip Technology |
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17 / 40 page  2013-2019 Microchip Technology Inc. DS20005255C-page 17 MCP16311/2 4.2.5 HIGH-SIDE DRIVE The MCP16311/2 features an integrated high-side N-Channel MOSFET for high-efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). The N-Channel MOSFET gate must be driven above its source to fully turn on the device, resulting in a gate-drive voltage above the input to turn on the high-side N-Channel. The high-side N-channel source is connected to the inductor and boost cap or switch node. When the high-side switch is off and the low-side switch is on, the inductor current flows through the low-side switch, providing a path to recharge the boost cap from the boost voltage source. The voltage for the boost cap is supplied from the internal regulator (VCC). An internal boost blocking diode is used to prevent current flow from the boost cap back into the regulator during the internal switch-on time. |
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