STTH212 datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	STTH212

подробное описание детали	High voltage ultrafast diode

PDF	9 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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STTH212

1 Electrical characteristics

3/9

Table 4.

Dynamic Electrical Characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 1A dIF/dt = -100 A/µs VR =30V

tfr

Forward recovery

time

Tj = 25°C

IF = 2A

dIF/dt = 50 A/µs

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Figure 1.

Conduction losses versus average

forward current

Figure 2.

Forward voltage drop versus

forward current

Figure 3.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (Epoxy

printed circuit board FR4,

LLeads = 10mm)

Figure 4.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (Epoxy

printed circuit board FR4,

SCU =1cm

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

δ=tp/T

(A)

F(AV)

P(W)

δ = 0.05

δ = 0.1 δ = 0.2

δ = 1

δ = 0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

(A)

(V)

T =125°C

(typical values)

T =25°C

(maximum values)

T =125°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

DO-201AD

Lleads=10mm

Zth(j-a)/Rth(j-a)

tp(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

SMB

SCu=1cm²

Zth(j-a)/Rth(j-a)

tp(s)

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