June 1998

2

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

100

uA

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltages I

-

-

3.0

V

V

BEsat

Base-emitter saturation voltage

I

0.85

0.94

1.03

V

h

FE

DC current gain

I

-

12

-

h

FE

I

4.2

5.7

7.3

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

80

-

pF

Switching times (16 kHz line

I

deflection circuit)

t

s

Turn-off storage time

3.2

4.3

µs

t

f

Turn-off fall time

0.35

0.48

µs

Switching times (64 kHz line

I

deflection circuit)

t

s

Turn-off storage time

1.9

-

µs

t

f

Turn-off fall time

0.17

-

µs

2 Measured with half sine-wave voltage (curve tracer).