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UPD4726GS-BAF датащи(PDF) 4 Page - Renesas Technology Corp

номер детали UPD4726GS-BAF
подробное описание детали  MOS INTEGRATED CIRCUIT
PDF  14 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD4726GS-BAF датащи(HTML) 4 Page - Renesas Technology Corp

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µPD4726
2
BLOCK DIAGRAM/PIN CONFIGURATION (Top View)
Notes 1. VDD and VSS output internally boosted voltages. Do not connect a load directly to these pins.
2. It is recommended that capacitors having a breakdown voltage of 20 V or higher be used as C1 through
C5. Inserting a bypass capacitor of 0.1 to 1
µF in between VCC and GND is also recommended.
3. Be sure to connect all the GND pins. Especially, make sure that pin 31 is connected; otherwise, the
µPD4726 will not operate normally. Be sure to leave the NC pins (pins 5 and 7) open.
4. The pull-up resistors for DIN1 through DIN4 and STBY and the pull-down resistor for EN are active resistors.
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
STBY
GND
EN
DOUT1
DOUT2
DOUT3
DOUT4
RIN1
RIN2
RIN3
RIN4
RIN5
RIN6
RIN7
1
2
3
4
5
6
7
C3
C4
C1
+
+
C2
+
+
+10 V
−10 V
+5 V
8
9
10
11
12
13
14
15
16
17
18
DIN1
DIN2
DIN3
DIN4
ROUT1
ROUT2
ROUT3
ROUT4
ROUT5
ROUT6
ROUT7
To internal
circuit
VDD
C1
+
VCC
C1
-
N.C.
GND
N.C.
C4
+
GND
C4
-
VSS
To internal
circuit



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