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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APT13005S датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT13005S датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor APT13005S DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) · High Reliability · Low Collector Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High ruggedness electronic ignitions · High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃ /W SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.2 A ICM Collector Current-Pulse 6.4 A IB Base Current-Continuous 1.6 A PT Total Power Dissipation @Ta=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Аналогичный номер детали - APT13005S |
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Аналогичное описание - APT13005S |
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