UPD75P3018A datasheet(33/66 Pages) RENESAS

номер детали	UPD75P3018A

подробное описание детали	MOS INTEGRATED CIRCUIT

PDF	66 Pages

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производитель	RENESAS [Renesas Technology Corp]

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µPD75P3018A

Data Sheet U11917EJ2V1DS

8.2 Program Memory Write Procedure

Program memory can be written at high speed using the following procedure.

(1)

Pull unused pins to Vss through resistors. Set the X1 pin low.

(2)

Supply 5 V to the VDD and VPP pins.

(3)

Wait 10

µs.

(4)

Select the zero-clear program memory address mode.

(5)

Supply 6 V to the VDD and 12.5 V to the VPP pins.

(6)

Write data in the 1 ms write mode.

(7)

Select the verify mode. If the data is correct, go to step (8) and if not, repeat steps (6) and (7).

(8)

(X : number of write operations from steps (6) and (7))

× 1 ms additional write.

(9)

Apply four pulses to the X1 pin to increment the program memory address by one.

(10) Repeat steps (6) to (9) until the end address is reached.

(11) Select the zero-clear program memory address mode.

(12) Return the VDD and VPP pins back to 5 V.

(13) Turn off the power.

The following figure shows steps (2) to (9).

VPP

VDD

VDD + 1

VDD

VPP

VDD

D0/P40 to D3/P43

D4/P50 to D7/P53

MD0/P30

MD1/P31

MD2/P32

MD3/P33

X repetitions

Write

Verify

Additional

write

Address

increment

Data input

Data

output

Data input

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