...........continued

Parameters

Absolute Maximum

Gate current (IG)

6.0 mA

CW power dissipation (85 °C)

40W

CW input power—no instability (4:1 VSWR, VD = 20V, IDQ = 112 mA, 25 °C)

+25 dBm

CW input power—no damage (10:1 VSWR, VD = 20V, IDQ = 112 mA, 25 °C)

+25 dBm

Channel temperature

275 °C

Eutectic die attach temperature (30s)

320 °C

Storage temperature

–65 °C to +150 °C

Note:  Exceeding any one or combination of these limits may cause permanent damage to this device.

Microchip does not recommend sustained operation near these survivability limits.

1.3

Typical RF Performance

1.3.1

Typical Small Signal Performance

Test Conditions (unless otherwise stated): Temp = 25 °C, CW, VD = 24V, ID = 110 mA.

Figure 1-1. Gain vs. Temperature @ 20V/110mA

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequency (GHz)

T=25C

T=-40C

T=85C

Figure 1-2. Gain vs. Temperature @ 24V/110mA

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

32

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Frequency (GHz)

T=25C

T=-40C

T=85C

ICP2840

Electrical Specifications

© 2022 Microchip Technology Inc.

and its subsidiaries

Data Sheet

DS-00004072B-page 4